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Freescale Semiconductor Technical Data
Document Number: MRF6VP2600H Rev. 5.1, 7/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. * Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. Power Gain -- 25 dB Drain Efficiency -- 28.5% ACPR @ 4 MHz Offset -- --61 dBc @ 4 kHz Bandwidth * Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 25.3 dB Drain Efficiency -- 59% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 sec, Duty Cycle = 20% Features * Characterized with Series Equivalent Large--Signal Impedance Parameters * CW Operation Capability with Adequate Cooling * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Designed for Push--Pull Operation * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP2600HR6
2-500 MHz, 600 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
CASE 375D-05, STYLE 1 NI-1230 PART IS PUSH-PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value --0.5, +110 --6.0, +10 -- 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 99C, 125 W CW, 225 MHz, 50 Vdc, IDQ = 2600 mA Case Temperature 64C, 610 W CW, 352.2 MHz, 50 Vdc, IDQ = 150 mA Case Temperature 81C, 610 W CW, 88--108 MHz, 50 Vdc, IDQ = 150 mA Symbol RJC Value (2,3) 0.20 0.14 0.16 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6VP2600HR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IGSS V(BR)DSS IDSS IDSS
Min -- 110 -- --
Typ -- -- -- --
Max 10 -- 50 2.5
Unit
Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 800 Adc) Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 2600 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Adc Vdc Adc mA
VGS(th) VGS(Q) VDS(on)
1 1.5 --
1.65 2.7 0.25
3 3.5 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
1.7 101 287
-- -- --
pF pF pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg., f = 225 MHz, DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ 4 MHz Offset. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Power Gain Drain Efficiency Input Return Loss Gps D ACPR IRL Gps D IRL 24 27 -- -- -- -- -- 25 28.5 --61 --18 22 68 --15 27 -- --59 --9 -- -- -- dB % dBc dB dB % dB
Typical Performance -- 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW
Typical Performance -- 88-108 MHz (In Freescale 88--108 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push--pull configuration. Gps D IRL -- -- -- 24.5 74 --5 -- -- -- dB % dB
MRF6VP2600HR6 2 RF Device Data Freescale Semiconductor
VBIAS + C16 + C15 +
B1
L3
L2
R1 L4 + C20 C21 C22 C23 +
VSUPPLY +
C14
C13
C12
C11
C9
C8
C7
C10
C6
C19
C17
C18
C24 C25
Z9 Z5 RF INPUT Z1 Z2 L1 Z3 Z4 J1 C1 C2 T1 Z1 Z2* Z3* Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 1.049 x 0.080 Microstrip 0.143 x 0.080 Microstrip 0.188 x 0.080 Microstrip 0.192 x 0.133 Microstrip 0.418 x 0.193 Microstrip 0.217 x 0.518 Microstrip 0.200 x 0.518 Microstrip 0.375 x 0.214 Microstrip Z13, Z14 Z15*, Z16* Z17, Z18 Z19 Z20 PCB Z6 Z8 Z7
Z11 Z13
Z15
Z17 RF OUTPUT
DUT Z10 Z12 Z14
Z19 C3 Z16 C4 Z18 T2 J2
Z20
C5
0.224 x 0.253 Microstrip 0.095 x 0.253 Microstrip 0.052 x 0.253 Microstrip 0.053 x 0.080 Microstrip 1.062 x 0.080 Microstrip Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55
* Line length includes microstrip bends
Figure 2. MRF6VP2600HR6 Test Circuit Schematic
Table 5. MRF6VP2600HR6 Test Circuit Component Designations and Values
Part B1 C1 C2, C4 C3 C5 C6, C9 C7, C13, C20 C8 C10, C17, C18 C11, C22 C12, C21 C14 C15 C16 C19 C23, C24, C25 J1, J2 L1 L2 L3 L4* R1 T1 T2 Description 95 , 100 MHz Long Ferrite Bead 47 pF Chip Capacitor 43 pF Chip Capacitors 100 pF Chip Capacitor 10 pF Chip Capacitor 2.2 F, 50 V Chip Capacitors 10K pF Chip Capacitors 220 nF, 50 V Chip Capacitor 1000 pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 20K pF Chip Capacitors 10 F, 35 V Tantalum Capacitor 22 F, 35 V Tantalum Capacitor 47 F, 50 V Electrolytic Capacitor 2.2 F, Chip Capacitor 470 F 63V Electrolytic Capacitors Jumpers from PCB to T1 & T2 17.5 nH, 6 Turn Inductor 8 Turn, #20 AWG ID = 0.125 Inductor, Hand Wound 82 nH, Inductor 9 Turn, #18 AWG Inductor, Hand Wound 20 , 3 W Axial Leaded Resistor Balun Balun Part Number 2743021447 ATC100B470JT500XT ATC100B430JT500XT ATC100B101JT500XT ATC100B7R5CT500XT C1825C225J5RAC ATC200B103KT50XT C1812C224J5RAC ATC100B102JT50XT CDR33BX104AKYS ATC200B203KT50XT T491D106K035AT T491X226K035AT 476KXM050M 2225X7R225KT3AB MCGPR63V477M13X26--RH Copper Foil B06T Copper Wire 1812SMS--82NJ Copper Wire 5093NW20R00J TUI--9 TUO--4 Vishay Comm Concepts Comm Concepts CoilCraft CoilCraft Manufacturer Fair--Rite ATC ATC ATC ATC Kemet ATC Kemet ATC Kemet ATC Kemet Kemet Illinois Cap ATC Multicomp
*L4 is wrapped around R1.
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 3
B1 C16
+
C13 C12 C11 C15 L3 L4, R1*
C22 C21 C20
C14
C9 C8 C7 C6 J1 CUT OUT AREA L2 C10 T1
C18 C17 T2 C4 J2 C19
C1
L1
C2
C3 (on side) MRF6VP2600H 225 MHz Rev. 3
* L4 is wrapped around R1.
Figure 3. MRF6VP2600HR6 Test Circuit Component Layout
MRF6VP2600HR6 4 RF Device Data Freescale Semiconductor
--
C23
C24
--
C25
--
C5
TYPICAL CHARACTERISTICS
1000 Ciss C, CAPACITANCE (pF) Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) TJ = 200_C TJ = 150_C 10 TJ = 175_C 100
10
Crss
1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
1 1
TC = 25_C 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 100
Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage
26.5 26 Gps, POWER GAIN (dB) 25.5 25 24.5 24 23.5 23 22.5 10 100 Pout, OUTPUT POWER (WATTS) PULSED VDD = 50 Vdc, IDQ = 2600 mA f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% Gps 80 70 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 60 50 D 40 30 20 10 0 1000 64
Note: Each side of device measured separately. Figure 5. DC Safe Operating Area
P3dB = 59.7 dBm (938 W) 62 P2dB = 59.1 dBm (827 W) 60 58 56 54 52 27 P1dB = 53.3 dBm (670 W)
Ideal
Actual
VDD = 50 Vdc, IDQ = 2600 mA, f = 225 MHz Pulse Width = 12 sec, Duty Cycle = 1% 28 29 30 31 32 33 34 35 36 37 38
Pin, INPUT POWER (dBm)
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
26 25 Gps, POWER GAIN (dB) 50 V 24 23 22 21 0 40 V VDD = 50 Vdc IDQ = 2600 mA f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% 100 200 300 35 V VDD = 30 V 400 500 600 700 45 V Gps, POWER GAIN (dB) 28 27 26 25 24 23 22 21 10
Figure 7. Pulsed CW Output Power versus Input Power
80 TC = --30_C 25_C 85_C VDD = 50 Vdc, IDQ = 2600 mA f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% D Gps 70 60 50 40 30 20 10 1000 D, DRAIN EFFICIENCY (%)
100 Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS -- TWO-TONE
--20 IMD, INTERMODULATION DISTORTION (dBc) --30 --40 3rd Order --50 5th Order --60 --70 5 10 100 Pout, OUTPUT POWER (WATTS) PEP 700 7th Order IMD, INTERMODULATION DISTORTION (dBc) VDD = 50 Vdc, IDQ = 2600 mA, f1 = 222 MHz f2 = 228 MHz, Two--Tone Measurements --10 --20 --30 --40 --50 VDD = 50 Vdc, Pout = 500 W (PEP), IDQ = 2600 mA Two--Tone Measurements
3rd Order
5th Order 7th Order
--60
0.1
1 TWO--TONE SPACING (MHz)
10
40
Figure 10. Intermodulation Distortion Products versus Output Power
26 25.5 Gps, POWER GAIN (dB) 25 24.5 24 23.5 20 IDQ = 2600 mA 2300 mA 2000 mA 1800 mA 1300 mA VDD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz Two--Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 700 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) --20 --25 --30 --35 --40 --45
Figure 11. Intermodulation Distortion Products versus Tone Spacing
VDD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz Two--Tone Measurements, 6 MHz Tone Spacing
IDQ = 1300 mA 2600 mA 1800 mA 2000 mA
--50 20
2300 mA 100 Pout, OUTPUT POWER (WATTS) PEP 700
Figure 12. Two-Tone Power Gain versus Output Power
Figure 13. Third Order Intermodulation Distortion versus Output Power
MRF6VP2600HR6 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- OFDM
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 --20 --30 --40 --50 --60 8K Mode DVB--T OFDM 64 QAM Data Carrier Modulation 5 Symbols --70 --80 --90 --100 --110 0 2 4 6 8 10 12 --5 --4 --3 --2 --1 0 1 2 3 4 5 PEAK--TO--AVERAGE (dB) f, FREQUENCY (MHz) ACPR Measured at 4 MHz Offset from Center Frequency 4 kHz BW 4 kHz BW
7.61 MHz
8K Mode DVB--T OFDM 64 QAM Data Carrier Modulation, 5 Symbols
Figure 14. Single-Carrier DVB- OFDM -T
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 25.8 25.6 Gps, POWER GAIN (dB) 25.4 25.2 25 24.8 24.6 24.4 24.2 30 1300 mA VDD = 50 Vdc, f = 225 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols 100 Pout, OUTPUT POWER (WATTS) AVG. 200 IDQ = 2600 mA 2300 mA 2000 mA 1800 mA --56 --58 --60 --62
Figure 15. 8K Mode DVB- OFDM Spectrum -T
VDD = 50 Vdc, f = 225 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols
IDQ = 1300 mA --64 --66 --68 20 1800 mA 2000 mA 2300 mA 2600 mA 100 Pout, OUTPUT POWER (WATTS) AVG. 200
Figure 16. Single-Carrier DVB- OFDM Power -T Gain versus Output Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 45 40 35 30 25 20 15 30
Figure 17. Single-Carrier DVB- OFDM ACPR -T versus Output Power
--56 --58 --60 D --62 Gps --64 ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
25_C 85_C ACPR
--30_C
25_C 85_C
TC = --30_C VDD = 50 Vdc, IDQ = 2600 MHz f = 225 MHz, 8K Mode OFDM --66 64 QAM Data Carrier Modulation 5 Symbols --68 100 400 Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Single-Carrier DVB- OFDM ACPR Power -T Gain and Drain Efficiency versus Output Power
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
109
108 MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 125 W Avg., and D = 28.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 19. MTTF versus Junction Temperature - CW -
MRF6VP2600HR6 8 RF Device Data Freescale Semiconductor
Zsource f = 225 MHz
Zo = 10
Zload
f = 225 MHz
VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg. f MHz 225 Zsource 1.42 + j8.09 Zload 4.45 + j1.16
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
--
Output Matching Network
-Z source Z
+ load
Figure 20. Series Equivalent Source and Load Impedance
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 9
COAX1 C18 C16 C14 C15 C17
+
C1 C3 B1 C4 L1 R1 L3 T1 L4 C2 CUT OUT AREA
+
J1
+
C5 C9 C10 L2 C6 C11 C12 COAX3 C13 COAX2 C7 C8
MRF6VP2600KH Rev. 2
88--108 MHz
Figure 21. MRF6VP2600HR6 Test Circuit Component Layout -- 88-108 MHz
Table 6. MRF6VP2600HR6 Test Circuit Component Designations and Values -- 88-108 MHz
Part B1 C1 C2 C3, C13, C14 C4, C5, C6 C7, C8, C9, C10, C11, C12 C15 C16, C17 C18 J1 L1 L2 L3, L4 R1 T1 Coax1, Coax2 Coax3 PCB Description 95 , 100 MHz Long Ferrite Bead 6.8 F, 50 V Chip Capacitor 30 pF Chip Capacitor 1000 pF Chip Capacitors 1 F, 100 V Chip Capacitors 3900 pF Chip Capacitors 4.7 F, 100 V Chip Capacitor 470 F, 63 V Electrolytic Capacitors 220 F, 100 V Electrolytic Capacitor Jumper with Copper Tape 82 nH Inductor 8 Turn, #14 AWG ID=0.250 Inductor, Hand Wound 8 nH Inductors 15 , 1/4 W Chip Resistor Balun Transformer 25 , Semi Rigid RF Cable, 3 mm Line, 16 cm Length 25 , Semi Rigid RF Cable, 3 mm Line, 15 cm Length 0.030, r = 2.55 1812SMS--82NJ Copper Wire A03TKLC CRCW120615R0FKEA TUI--LF--9 UT--141C--25 UT--141C--25 GX0300--55--22 CoilCraft Freescale CoilCraft Vishay Comm Concepts Micro--Coax Micro--Coax Arlon Part Number 2743021447 C4532X7R1H685K ATC100B300JT500XT ATC100B102JT50XT GRM31CR72A105KA01L ATC700B392JT50X GRM55ER72A475KA01B MCGPR63V477M13X26--RH MCGPR100V227M16X26--RH Manufacturer Fair--Rite TDK ATC ATC Murata ATC Murata Multicomp Multicomp
MRF6VP2600HR6 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 88-108 MHz
30 29 28 Gps, POWER GAIN (dB) 27 26 25 24 23 22 21 20 100 200 300 400 98 MHz 88 MHz D VDD = 50 Vdc, IDQ = 150 mA 108 MHz Gps 108 MHz 98 MHz 88 MHz 85 80 70 65 60 55 50 45 40 35 500 600 700 800 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) 75
Pout, OUTPUT POWER (WATTS)
Figure 22. Broadband CW Power Gain and Drain Efficiency versus Output Power -- 88-108 MHz
27 26.5 26 Gps, POWER GAIN (dB) 25.5 25 24.5 24 23.5 23 22.5 22 86 90 94 98 102 106 D 82 81 80 Gps 79 78 77 76 75 74 73 72 110
VDD = 50 Vdc, IDQ = 150 mA Pout = 600 W, CW
f, FREQUENCY (MHz)
Figure 23. CW Power Gain and Drain Efficiency versus Frequency -- 88-108 MHz
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 11
f = 88 MHz f = 108 MHz Zsource Zo = 25
Zload f = 108 MHz f = 88 MHz
VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W Avg. f MHz 88 98 108 Zsource 3.20 + j14.50 4.20 + j15.00 4.00 + j15.00 Zload 10.35 + j2.80 9.50 + j3.00 8.90 + j3.50
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
--
Output Matching Network
-Z source Z
+ load
Figure 24. Series Equivalent Source and Load Impedance -- 88-108 MHz
MRF6VP2600HR6 12 RF Device Data Freescale Semiconductor
C11 B1
C9 C7 MRF6VP2600H 352.2 MHz Rev. 1
C20
C5
L3
C18 COAX3
COAX1
L1
C1 C3*
C13
C14
C15
C2 C24*
C4*
CUT OUT AREA
C17
C16
COAX2
L2
COAX4 C19
L4 B2 C10 C12 *Mounted on side C6 C8
--
C21
--
Figure 25. MRF6VP2600HR6 Test Circuit Component Layout -- 352.2 MHz
Table 7. MRF6VP2600HR6 Test Circuit Component Designations and Values -- 352.2 MHz
Part B1, B2 C1, C2 C3*, C24* C4* C5, C6 C7, C8 C9, C10 C11, C12 C13 C14, C15, C16, C17 C18, C19 C20, C21, C22, C23 Coax1, 2, 3, 4 L1, L2 L3, L4 *Mounted on side Description 47 , 100 MHz Short Ferrite Beads 100 pF Chip Capacitors 22 pF Chip Capacitors 20 pF Chip Capacitor 2.2 F Chip Capacitors 220 nF Chip Capacitors 0.1 F Chip Capacitors 47 F, 50 V Electrolytic Capacitors 39 pF, 500 V Chip Capacitor 240 pF Chip Capacitors 2.2 F Chip Capacitors 470 F, 63 V Electrolytic Capacitors 25 , Semi Rigid Coax, 2.2 2.5 nH, 1 Turn Inductors 10 Turn, #16 AWG ID=0.160 Inductors, Hand Wound Part Number 2743019447 ATC100B101JT500XT ATC100B221JT300XT ATC100B200JT500XT C1825C225J5RAC--TU C1812C224K5RAC--TU CDR33BX104AKWS 476KXM050M MCM01--009DD390J--F ATC100B241JT200XT G2225X7R225KT3AB MCGPR63V477M13X26--RH UT141--25 A01TKLC Copper Wire ATC ATC ATC Kemet Kemet AVX Illinois Cap CDE ATC ATC Multicomp Precision Tube Company Coilcraft Freescale Manufacturer Fair--Rite
RF Device Data Freescale Semiconductor
--
--
C22
C23
MRF6VP2600HR6 13
TYPICAL CHARACTERISTICS -- 352.2 MHz
23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 15 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 50 Vdc IDQ = 150 mA f = 352.2 MHz Gps 80 70 60 50 40 30 20 10 0 1000 D, DRAIN EFFICIENCY (%)
Figure 26. CW Power Gain and Drain Efficiency versus Output Power
MRF6VP2600HR6 14 RF Device Data Freescale Semiconductor
Zo = 10 f = 352.2 MHz
Zsource
f = 352.2 MHz Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW f MHz 352.2 Zsource 1.10 + j3.80 Zload 2.26 + j3.57
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
--
Output Matching Network
-Z source Z
+ load
Figure 27. Series Equivalent Source and Load Impedance -- 352.2 MHz
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 15
PACKAGE DIMENSIONS
MRF6VP2600HR6 16 RF Device Data Freescale Semiconductor
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 17
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Mar. 2008 July 2008 * Initial Release of Data Sheet * Removed Capable of Handling 5:1 VSWR bullet, p. 1 * Corrected Zsource and Zload values from 1.58 + j6.47 to 1.42 + j8.09 and 4.60 + j1.85 to 4.45 + j1.16 and replotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9 2 Sept. 2008 * Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to denote that each side of device is measured separately, p. 5 * Updated Fig. 5, DC Safe Operating Area, to show one side of the device, p. 5 * Figs. 21 and 27, Series Equivalent Source and Load Impedance, corrected Zsource copy to read "Test circuit impedance as measured from gate to gate, balanced configuration" and Zload copy to read "Test circuit impedance as measured from gate to gate, balanced configuration", p. 9, 14 2.1 4 Nov. 2008 May 2009 * Corrected Figs. 21 and 27 Revision History Zload copy to read "Test circuit impedance as measured from drain to drain, balanced configuration", p. 9, 14 * Updated bullets in Features section to reflect consistent listing across products, p. 1 * Added thermal data for 352.2 MHz application to Table 2, Thermal Characteristics, p. 1 * Added Typical Performances table for 352.2 MHz application, p. 2 * Added Fig. 28, Test Circuit Component Layout -- 352.2 MHz and Table 7, Test Circuit Component Designations and Values -- 352.2 MHz, p. 15 * Added Fig. 29, CW Power Gain and Drain Efficiency versus Output Power -- 352.2 MHz p. 16 * Added Fig. 30, Series Equivalent Source and Load Impedance -- 352.2 MHz, p. 17 4.1 June 2009 * Changed "EKME630ELL471MK25S" part number to "MCGPR63V477M13X26--RH", Table 5, Test Circuit Component Designations and Values and Table 6, Test Circuit Component Designations and Values -- 88--108 MHz, p. 3, 11 * Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software, p. 20 5 May 2010 * Changed 10--500 MHz to 2--500 MHz in Device Description box, p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 1 * Added thermal data for 88--108 MHz application to Thermal Characteristics table, p. 1 * Added Typical Performance table for 88--108 MHz application, p. 2 * Removed Fig. 20, MTTF versus Junction Temperature -- Pulsed and renumbered accordingly, p. 8 * Replaced Fig. 22 Test Circuit Component Layout, Table 6. Test Circuit Component Designations and Values, the Typical Characteristic curves and Fig. 27 Series Impedance for 88--108 MHz with improved circuit performance figures. The 88--108 MHz application circuit is also now a more compact size., p. 10--12 5.1 July 2010 * Fig. 24, Series Impedance for 88--108 MHz, table and plot updated to reflect correct location of Zsource and Zload, p. 12 Description
MRF6VP2600HR6 18 RF Device Data Freescale Semiconductor
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MRF6VP2600HR6
Document Number: RF Device Data MRF6VP2600H Rev. 5.1, 7/2010 Freescale Semiconductor
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